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Product Detailed Parameters
- Description：MOSFET N-CH 60V 17.2A/100A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：17.2A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2162 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.88W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMTH6006LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a low on-state resistance (RDS(ON)) of 6.5mΩ at VGS=10V, or 10mΩ at VGS=4.5V. The device supports a continuous drain current of up to 100A at TC=25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8/SWP format with wettable flanks, it is supplied in tape and reel quantities of 2500 units.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Features wettable flank technology to facilitate improved optical inspection during assembly
- Subjected to 100% unclamped inductive switching (UIS) testing in production for reliability
- Qualified to JEDEC standards for high reliability applications
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific package variant required, as the datasheet lists both Type Q and Type UX configurations under the same part number. Confirm that the application environment does not exceed the specified thermal limits. Ensure compliance with RoHS and REACH directives if applicable to your region. Check for automotive-grade alternatives like the DMTH6006LPSWQ if AEC-Q qualification is mandatory for the end product.
Selection Notes
Select this component when a 60V rating is sufficient and low conduction losses are critical. The PowerDI5060-8 package offers superior thermal dissipation compared to standard surface-mount packages. Consider the gate threshold voltage characteristics for logic-level driving requirements. Evaluate the total gate charge against the driver capability to ensure optimal switching speeds without excessive drive current demands.
Part Context
This device belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. It utilizes silicon technology to achieve high performance in a compact footprint. The PowerDI5060-8 package is designed to minimize thermal resistance from junction to case, enhancing power handling capabilities. It is distinct from through-hole or smaller SMD packages due to its exposed drain pad design.
Replacement Considerations
For automotive applications requiring AEC-Q qualification, consider the DMTH6006LPSWQ. Verify pinout compatibility and thermal resistance values when substituting with other 60V N-channel MOSFETs in the PowerDI5060-8 package.
