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Product Detailed Parameters
- Description：MOSFET N-CH 60V 14.2A/59A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14.2A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH6009LK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 59A at case temperatures of +25°C, with a static drain-source on-resistance of 10mΩ at VGS=10V. Packaged in a TO-252 (DPAK) form factor, it supports tape and reel delivery.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Low on-state resistance minimizes conduction losses
- Optimized figure of merit for high-efficiency switching performance
- Thermally efficient package design enables higher density end products
Applications
- Power management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required 2,500-unit tape and reel packaging configuration. Confirm that the standard commercial grade part aligns with project requirements, noting that an automotive-compliant variant exists under a separate datasheet designation. Ensure compatibility with RoHS directives and halogen-free specifications during component sourcing.
Selection Notes
Select this component for applications requiring robust thermal performance in high ambient temperature environments. The small form factor facilitates compact board layouts while maintaining high power handling capabilities. Evaluate the gate charge characteristics against driver capabilities to ensure optimal switching speeds and minimize dynamic losses in power conversion topologies.
Part Context
This device belongs to the DMTH6009LK3 series of advanced N-channel MOSFETs from Diodes Incorporated. The series utilizes specialized technology to balance low on-resistance with superior switching dynamics. The product line targets modern power management solutions where efficiency and thermal stability are critical design constraints.
Replacement Considerations
An automotive-compliant version is available as DMTH6009LK3Q. Verify if AEC-Q101 qualification is necessary for the target application before considering substitution.
