DMTH6009LPSWQ-13

$0.41

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4f2485d54eb1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11.76A (Ta), 89.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH6009LPSWQ-13

Overview

The DMTH6009LPSWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 89.5A at TC = +25°C. The device exhibits a low on-resistance (RDS(ON)) of 10mΩ at VGS = 10V and 12mΩ at VGS = 4.5V. It supports an operating temperature range from -55°C to +175°C and includes a total gate charge (Qg) of 33.5nC.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Manufactured with 100% Unclamped Inductive Switching (UIS) testing for enhanced reliability.
Low RDS(ON) characteristics minimize conduction power losses.
Low QG specifications reduce switching energy losses during operation.

Applications

High-frequency switching circuits
Synchronous rectification systems
DC-DC converter topologies

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as defined in the manufacturer's documentation. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive supply chains. Ensure compatibility with IATF 16949 certified manufacturing processes for designated applications.

Selection Notes

Select this component when a 60V N-channel MOSFET with high current handling capability is required in a compact surface-mount footprint. The PowerDI5060-8 package provides efficient thermal dissipation through the exposed drain pad. Consider the low gate charge and fast switching times for high-efficiency power conversion designs operating within the specified temperature range.

Part Context

This part belongs to the DMTH series of automotive-grade MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI® technology to integrate high-performance silicon into a lead-free, halogen-free plastic package. The device is specifically engineered to meet stringent automotive reliability standards while maintaining small board space requirements.

Replacement Considerations

Consult official cross-reference lists or contact Diodes Incorporated directly for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without verifying pinout compatibility and package dimensions.

FAQ

Is the DMTH6009LPSWQ qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.