DMTH6010LPD-13

Overview

The DMTH6010LPD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (V_DSS) of 60V and a maximum on-resistance (R_DS(ON)) of 11mΩ at V_GS = 10V and I_D = 20A. The device supports a continuous drain current of 47.6A at case temperatures of +25°C and operates within a junction temperature range of -55°C to +175°C. Total power dissipation reaches 2.8W at ambient temperatures of +25°C.

Feature Summary

• Engineered for high-efficiency power management with minimized on-state resistance and superior switching performance.
• Rated for operation up to +175°C, suitable for high ambient temperature environments.
• Manufactured using totally lead-free and fully RoHS compliant processes, including halogen and antimony free materials.

Applications

• Engine Management Systems
• Body Control Electronics
• DC-DC Converters

Procurement Notes

Verify the specific package variant against the datasheet before ordering, as the DMTH6010LPD-13 designation covers both Type C and Type UXD configurations within the PowerDI5060-8 footprint. Confirm that the required packing quantity aligns with the standard 2,500 units per tape and reel carrier specified by the manufacturer.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact surface-mount form factor. Ensure the application's thermal design accommodates the specified R_θJA of 53°C/W for steady-state operations on FR-4 substrates. Verify that gate drive voltages meet the thresholds for the desired R_DS(ON) levels.

Part Context

This part belongs to the DMTH6010 series of automotive-grade MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI® trademarked packaging technology to provide robust thermal performance and low profile. The series is intended for applications requiring high conversion efficiency and reliability in demanding electronic environments.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q100/101 qualification, consult the separate datasheet for the DMTH6010LPDQ variant. Direct cross-referencing with other manufacturers requires careful verification of pinout compatibility and thermal characteristics due to the proprietary PowerDI package geometry.

FAQ

What is the maximum pulsed drain current for the DMTH6010LPD?

The maximum pulsed drain current (I_DM) is rated at 170A, based on a 10µs pulse duration with a duty cycle of 1%.

Does the DMTH6010LPD support unclamped inductive switching?

Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing in production to ensure reliability under such conditions.

What are the typical dynamic characteristics regarding gate charge?

At V_GS = 10V, V_DS = 30V, and I_D = 20A, the total gate charge (Q_g) is typically 40.2nC, with a gate-source charge (Q_gs) of 5.9nC and gate-drain charge (Q_gd) of 9.3nC.