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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 13.1A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：13.1A (Ta), 47.6A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2615pF @ 30V
- Power - Max：2.8W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH6010LPDWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a PowerDI5060-8 package and operates up to +175°C. Key electrical parameters include a drain-source voltage (BVDSS) of 60V, a maximum on-resistance (RDS(ON)) of 11mΩ at VGS=10V, and a continuous drain current (ID) of 47.6A at TC=+25°C. The device has a gate threshold voltage (VGS(TH)) of 3V max, total gate charge (Qg) of 40.2nC at VGS=10V, and input capacitance (Ciss) of 2615pF. Thermal resistance from junction to case is 4°C/W.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive use
- Rated for operation in high ambient temperature environments up to +175°C
- Features wettable flank design for improved optical inspection
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 qualification and PPAP capability when sourcing. Confirm the 'W' suffix denotes the wettable flank variant suitable for automated optical inspection. Ensure the ordering quantity matches the standard 2,500 units per tape and reel packaging configuration provided by the manufacturer.
Selection Notes
Select this component for designs requiring dual N-channel switching in a compact surface-mount footprint. The low thermal resistance allows efficient heat dissipation through the exposed drain pad. Verify that the 60V rating and 11mΩ on-resistance meet the circuit's voltage and conduction loss requirements under expected operating temperatures.
Part Context
This part belongs to the DMTH6010 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package type. The series is engineered specifically for robust performance in demanding automotive electronic environments where reliability and thermal stability are critical.
Replacement Considerations
Direct substitutes within the same family include DMTH6010LPD-13, though it lacks the wettable flank feature. For automotive-grade replacements with PPAP support, consider DMTH6010LPDWQ-13 variants or other AEC-Q101 qualified dual N-channel MOSFETs in the PowerDI5060-8 package from the same manufacturer.
