DMTH6010LPSW-13

$0.30

Description：MOSFET N-CH 60V 15.5A/80A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:017aaa2cd585 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 15.5A/80A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：15.5A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.9W (Ta), 75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type Q)
Package / Case：8-PowerTDFN

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DMTH6010LPSW-13

Overview

The DMTH6010LPSW-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 60V and a maximum gate-source voltage (VGSS) of ±20V. The device supports a continuous drain current of 80A at TC = +25°C and 15.5A at TA = +25°C. Static drain-source on-resistance (RDS(ON)) is rated at 8mΩ max at VGS = 10V and 12mΩ max at VGS = 4.5V. Total power dissipation reaches 75W at TC = +25°C with a thermal resistance (RθJC) of 2.0°C/W. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Manufactured with wettable flank technology to facilitate improved optical inspection.
Qualified to JEDEC standards for high reliability and tested for unclamped inductive switching robustness.
Lead-free finish compliant with RoHS directives and free of halogens and antimony.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific suffix '-13' corresponds to the tape and reel carrier configuration required for your assembly line. Confirm that the PowerDI5060-8/SWP footprint matches your PCB layout guidelines. Ensure component authenticity through authorized distribution channels to guarantee compliance with AEC-Q reliability standards and environmental specifications.

Selection Notes

Select this component when a 60V rating is sufficient and low on-state resistance is critical for efficiency. The PowerDI5060-8 package offers a compact form factor with significant thermal performance via the exposed drain pad. Consider the 175°C rating for applications requiring extended thermal margins or high ambient operating temperatures.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI®5060-8 package, which integrates multiple drain pins for enhanced thermal dissipation. The 'SWP' designation indicates the specific wettable flank variant within the PowerDI family, optimizing solderability and inspection capabilities.

Replacement Considerations

For automotive-compliant versions, consider the DMTH6010LPSWQ. Verify pinout compatibility and thermal characteristics against existing designs before substitution.