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Product Detailed Parameters
- Description：MOSFET N-CH 60V 15.5A/80A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：15.5A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.9W (Ta), 75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMTH6010LPSWQ-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 60 V and a maximum continuous drain current (I_D) of 98 A at case temperature of +25°C. The device exhibits a low on-resistance (R_DS(ON)) of 8 mΩ at V_GS = 10 V and 12 mΩ at V_GS = 4.5 V. Designed for automotive environments, it supports an operating junction temperature range of -55°C to +175°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- Features wettable flank terminals to facilitate optical inspection
- Undergoes 100% unclamped inductive switching (UIS) testing during production
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific suffix variant against the datasheet, as the PowerDI5060-8 package is available in Type Q and Type UX configurations. Confirm that the selected component meets the required IATF16949 manufacturing standards and PPAP documentation levels mandated by the target automotive application specifications.
Selection Notes
Select this component when high thermal resilience and robust switching performance are required in compact surface-mount designs. The low R_DS(ON) minimizes conduction losses, while the high avalanche energy rating ensures reliability under transient conditions. Ensure gate drive voltages align with the specified thresholds for optimal switching efficiency.
Part Context
This part belongs to the DMTH6010 series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 form factor, which provides enhanced thermal dissipation compared to standard packages. The series is engineered specifically for high-reliability automotive electronics requiring strict quality control and extended temperature operation.
Replacement Considerations
Consult the official Diodes Incorporated cross-reference documentation for verified substitutes. Ensure any replacement maintains the same 60V rating, 8mΩ R_DS(ON), and PowerDI5060-8 footprint. Verify that alternative parts also hold AEC-Q101 qualification if used in the original automotive context.
