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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2841 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH6010SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and an 8mΩ maximum on-resistance at VGS=10V. The device supports a continuous drain current of 100A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount footprint, it includes an exposed drain pad for thermal management.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Verified with 100% unclamped inductive switching (UIS) testing
- Designed for low on-state losses and high conversion efficiency
- Compliant with RoHS directives and halogen-free standards
Applications
- Motor controls
- Lamp drivers
- Solenoid controls
- Transmission controls
- Ultra-high performance power switching
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all applicable environmental compliance requirements for your target market. Ensure proper handling procedures are followed during assembly due to the surface mount package type.
Selection Notes
Select this component when a robust N-channel MOSFET capable of handling high currents in compact packages is required. Consider the thermal resistance characteristics and the exposed drain pad design for effective heat dissipation in high-power applications. Verify gate drive compatibility with the specified threshold voltage parameters.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides a balance between electrical performance and physical footprint. The series is designed to minimize on-resistance while maintaining superior switching performance for demanding power electronics applications.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Consult official substitution lists for electrically equivalent alternatives if the exact model is unavailable.
