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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 9.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta), 24.5A (Tc)
- Rds On (Max) @ Id, Vgs：20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：825pF @ 30V
- Power - Max：1.46W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH6015LDVW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a junction temperature range of -55°C to +175°C. The device is housed in a POWERDI3333-8/SWP package with wettable flanks. Key electrical parameters include a maximum on-resistance (RDS(ON)) of 20.5mΩ at VGS=10V and 27mΩ at VGS=4.5V. Continuous drain current reaches 24.5A at TC=+25°C, while total gate charge is 14.3nC at VGS=10V.
Feature Summary
- Rated for high ambient temperature environments up to +175°C
- Features wettable flanks to improve optical inspection reliability
- Includes ESD protected gates for enhanced circuit robustness
- Compliant with RoHS standards and free from halogen and antimony
Applications
- Wireless charging systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix when sourcing components. The suffix '-7' indicates a tape and reel packaging quantity of 2,000 units. Confirm that the required packaging format aligns with automated assembly equipment specifications before placing orders to ensure compatibility with production lines.
Selection Notes
Select this component for applications requiring low on-state losses and fast switching speeds. Ensure the thermal design accommodates the specified thermal resistance values under steady-state conditions. Verify that the gate drive voltage meets the requirements for optimal RDS(ON) performance at either 4.5V or 10V levels.
Part Context
This part belongs to the DMTH6015 series of dual N-channel MOSFETs designed for power management efficiency. It utilizes the POWERDI3333-8/SWP case material, which is a molded plastic compound classified as UL 94V-0. The device integrates two independent channels within a single compact footprint to save board space.
Replacement Considerations
Direct substitutes are not explicitly listed in the official documentation. When evaluating alternatives, verify that the replacement maintains the 60V BVDSS rating and compatible POWERDI3333-8 pinout. Ensure the new component supports the same +175°C operating temperature and offers similar RDS(ON) characteristics.
