DMTH6015LPDW-13

$0.27

Description：MOSFET 2N-CH 60V 9.4A PWRDI50
Series：-

SKU:ae10f74adfc1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 9.4A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 36.3A (Tc)
Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：825pF @ 30V
Power - Max：2.6W (Ta), 39.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：-
Qualification：-

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DMTH6015LPDW-13

Overview

The DMTH6015LPDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8/SWP package and supports junction temperatures up to +175°C. The device provides a drain-source voltage (BVDSS) of 60V, with a maximum on-resistance (RDS(ON)) of 20mΩ at VGS=10V and 27mΩ at VGS=4.5V. Continuous drain current reaches 36.3A at TC=+25°C. Key electrical parameters include a gate threshold voltage of 1.3V to 2.5V, total gate charge of 14.3nC at VGS=10V, and input capacitance of 825pF.

Feature Summary

Wettable flank design for improved optical inspection
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Wireless Charging
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix '-13' against official Diodes documentation to confirm the 2,500-unit tape and reel packaging configuration. Ensure that the PowerDI5060-8/SWP case type matches the required footprint for the target PCB layout. Cross-reference the datasheet revision number to validate all electrical characteristics before finalizing component selection.

Selection Notes

Evaluate thermal resistance values based on the intended mounting conditions, distinguishing between junction-to-ambient and junction-to-case metrics. Confirm that the operating environment remains within the specified -55°C to +175°C range. Verify that the gate drive voltage aligns with the RDS(ON) specifications provided for both 10V and 4.5V test conditions to ensure optimal efficiency.

Part Context

This component belongs to the DMTH6015 series from Diodes Incorporated, designed for high-efficiency power management applications. It utilizes the PowerDI5060-8/SWP package to minimize on-state losses while maintaining fast switching speeds. The device is engineered for robust performance in high ambient temperature environments.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume cross-compatibility with other MOSFET packages or voltage ratings without explicit confirmation from the datasheet.