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Product Detailed Parameters
- Description：MOSFET N-CH 60V 41A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：939 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH6016LFVW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a temperature range of -55°C to +175°C. The device utilizes a PowerDI3333-8 package with wettable flanks for optical inspection. Maximum on-resistance is 16mΩ at VGS=10V and 27mΩ at VGS=4.5V, supporting continuous drain currents of 41A and 31.6A respectively at 25°C case temperature.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features wettable flanks to facilitate improved optical inspection
- Qualified to JEDEC standards for high reliability applications
- Compliant with RoHS directives and free from halogen and antimony
Applications
- Backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the required package type matches the PowerDI3333-8 (SWP) specification. Ensure compliance with the stated moisture sensitivity level and terminal finish requirements during storage and assembly processes.
Selection Notes
Select this component when designing circuits requiring low on-state resistance combined with superior switching performance. The small form factor enables higher density end products compared to larger packages. Consider the thermal characteristics and maximum ratings to ensure safe operation within the specified junction temperature limits under expected load conditions.
Part Context
This part belongs to the DMTH6016 series of N-channel MOSFETs designed for high-efficiency power management. It is distinct from automotive-compliant variants such as the DMTH6016LFVWQ. The device is engineered to minimize conduction losses while maintaining robust switching capabilities suitable for modern electronic designs.
Replacement Considerations
Consult official documentation for equivalent part numbers or automotive-grade alternatives like the DMTH6016LFVWQ. Verify pinout compatibility and thermal resistance values before substituting components in existing designs.
