DMTH6016LFVW-7

$0.22

Description：MOSFET N-CH 60V 41A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6f9870d85d0b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 41A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：939 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

Download product information

DMTH6016LFVW-7

Overview

The DMTH6016LFVW is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 60 V and a maximum on-resistance (RDS(ON)) of 16 mΩ at VGS = 10 V. The device supports a continuous drain current of 41 A at TC = +25°C and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Includes 100% unclamped inductive switching testing for application reliability
Features wettable flanks to facilitate improved optical inspection during assembly

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the required tape and reel quantity of 2,000 units. Confirm that the standard DMTH6016LFVW meets all electrical requirements before considering automotive-compliant alternatives like the DMTH6016LFVWQ. Ensure compatibility with JEDEC standards if high reliability is mandated by the design specifications.

Selection Notes

Select this component when a compact form factor with thermally efficient packaging is required for higher density designs. The low on-state resistance combined with superior switching performance makes it appropriate for high-efficiency power management applications. Evaluate thermal resistance parameters against the specific PCB layout and copper thickness available in the target system.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package, which provides a small footprint while maintaining robust thermal characteristics. The device is manufactured using silicon technology and is fully RoHS compliant.