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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 9.2A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta), 33.2A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：864pF @ 30V
- Power - Max：2.5W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (SWP)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH6016LPDWQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a PowerDI5060-8 package and meets AEC-Q101 standards with PPAP capability. Key electrical parameters include a drain-source voltage (BVDSS) of 60V, a maximum on-resistance (RDS(ON)) of 19mΩ at VGS=10V, and a continuous drain current (ID) of 33.2A at TC=+25°C. The device supports an operating temperature range from -55°C to +175°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive use
- Rated for high ambient temperatures up to +175°C
- 100% Unclamped Inductive Switching (UIS) tested in production
- Totally lead-free, RoHS compliant, and halogen/antimony free
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the required component meets the AEC-Q101 qualification and IATF 16949 manufacturing facility requirements specified by the manufacturer for automotive change control compliance.
Selection Notes
Select this component when designing circuits requiring dual N-channel MOSFETs with low on-resistance and high thermal stability. Ensure the application environment does not exceed the +175°C junction temperature limit. Verify that the gate drive voltage aligns with the RDS(ON) specifications provided for VGS levels of 4.5V and 10V to optimize switching efficiency.
Part Context
This part belongs to the DMTH6016 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. The series is engineered to provide high conversion efficiency and fast switching speeds within compact PowerDI packages. The 'WQ' designation indicates AEC-Q101 qualification and PPAP capability, distinguishing it from non-automotive variants.
Replacement Considerations
Consult the official Diodes Incorporated datasheet or contact the manufacturer directly for confirmed substitute part numbers. Do not assume cross-compatibility with other dual N-channel MOSFETs without verifying pinout, thermal resistance, and electrical parameter alignment.
