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Product Detailed Parameters
- Description：MOSFET N-CHA 60V 10.6A POWERDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 37.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH6016LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates up to a +175°C junction temperature. The device provides a maximum on-resistance of 16mΩ at VGS=10V and 24mΩ at VGS=4.5V, supporting continuous drain currents of 68A at TC=25°C and 12.3A at TA=25°C. Packaged in a PowerDI5060-8 surface-mount format with a profile under 1.1mm, it includes an internal body diode with a reverse recovery time of 22ns.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Utilizes a thermally efficient package with a profile less than 1.1mm for thin designs
- Designed to minimize on-state resistance while maintaining superior switching performance
Applications
- Power management systems
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the component meets RoHS compliance and Halogen/Antimony-free requirements if mandated by your design specifications. Ensure the selected part number matches the exact electrical ratings required for your thermal and voltage constraints.
Selection Notes
Select this component when designing power management or motor control applications requiring low on-state losses and fast switching speeds. The device is suitable for environments demanding high reliability through 100% UIS testing. Consider the PowerDI5060-8 package dimensions and thermal characteristics to ensure adequate heat dissipation within the target system's physical and operational limits.
Part Context
This component belongs to the DMTH6016LPS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is distinct from the automotive-compliant variant, which is documented under the separate part number DMTH6016LPSQ. The standard version focuses on general-purpose high-efficiency power management rather than specific automotive qualification standards.
Replacement Considerations
The automotive-compliant alternative is DMTH6016LPSQ. Verify functional equivalence regarding pinout and electrical parameters before substitution. No other direct substitutes are confirmed in the provided documentation.
