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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7.6A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
- Rds On (Max) @ Id, Vgs：19.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：864pF @ 30V
- Power - Max：1.4W, 1.9W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH6016LSDQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a 60V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 19.5mΩ at VGS=10V and 28mΩ at VGS=4.5V. Continuous drain current reaches 7.6A at TA=+25°C with VGS=10V. Packaged in an SO-8 case, it supports AEC-Q101 qualification and PPAP requirements.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for high reliability
- Rated to +175°C for high ambient temperature environments
- 100% unclamped inductive switching tested for robustness
- Low RDS(ON) minimizes on-state losses
Applications
- Power Management
- DC-DC Converters
- Motor Control
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500 units per tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the 'Q' designation indicates AEC-Q101 qualification and PPAP support are required for the intended automotive application context before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel MOSFET with 60V capability and +175°C thermal rating is required. Ensure the SO-8 package dimensions align with the PCB footprint design. Verify that the gate threshold voltage and total gate charge characteristics meet the driving circuit requirements for the target switching frequency and load conditions.
Part Context
This part belongs to the DMTH6016 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. The series includes variants with different packaging options such as PowerDI and LFJ packages. The DMTH6016LSDQ-13 specifically utilizes the SO-8 case style and carries the Q suffix denoting automotive qualification status within this product family.
Replacement Considerations
Consult the official datasheet for equivalent circuit pin-outs and mechanical dimensions when evaluating alternatives. Cross-compatibility requires matching the 60V BVDSS, dual N-channel configuration, and SO-8 package outline. Verify that any substitute meets the same AEC-Q101 qualification and thermal performance standards.
