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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI10
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：124 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8191 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：5.6W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI1012-8
- Package / Case：8-PowerSFN
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Overview
The DMTH8003STLW is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI1012-8 package. It features an 80V drain-source voltage rating and a maximum continuous drain current of 173A at 25°C case temperature. The device exhibits a low on-resistance of 2.5mΩ at VGS=10V and supports a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 124nC, and avalanche energy capability of 800mJ.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- 100% unclamped inductive switching (UIS) tested in production for robustness
- Wettable flank design facilitates improved optical inspection
- Lead-free finish with RoHS compliance and halogen/antimony-free composition
Applications
- Motor controls
- DC-DC converters
- Power management systems
- Load switch applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 1500-unit tape and reel packaging configuration. Confirm that the component meets the required automotive quality standards if applicable, as standard versions may differ from AEC-Q100 qualified parts. Ensure the selected variant matches the intended thermal and mechanical constraints of the final assembly.
Selection Notes
Select this component when high current handling and low conduction losses are critical. The 80V rating provides margin for standard 48V or 24V bus architectures. Consider the POWERDI1012-8 package size for board space optimization while maintaining high thermal dissipation capabilities through the exposed drain pad.
Part Context
This part belongs to the DMTH series of advanced N-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-resistance while maintaining superior switching performance. The DMTH8003STLW specifically targets power management and load switch applications requiring high efficiency and reliability in compact form factors.
Replacement Considerations
Direct substitutes within the same family include DMTH8003SPS-13 and DMTH8003STLWQ-13. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure the replacement part meets the same voltage and current ratings for the specific application requirements.
