DMTH8003STLWQ-13

$1.02

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ceb6685bf849 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：173A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：124 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8191 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：5.6W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI1012-8
Package / Case：8-PowerSFN

Download product information

DMTH8003STLWQ-13

Overview

The DMTH8003STLWQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI1012-8 package. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 173A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 2.5mΩ max at VGS = 10V. It supports a junction temperature range of -55°C to +175°C and includes a wettable flank design for improved optical inspection.

Feature Summary

Rated for operation up to +175°C, making it suitable for high ambient temperature environments.
Manufactured with wettable flanks to facilitate improved optical inspection during assembly.
Qualified to AEC-Q101 standards and supported by PPAP for automotive application requirements.
Subjected to 100% unclamped inductive switching (UIS) testing in production to ensure robustness.

Applications

Motor controls
DC-DC converters
Power managements

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 1500-unit tape and reel carrier configuration. Confirm that the component meets the required AEC-Q101 qualification and PPAP documentation standards for your specific automotive or industrial supply chain. Ensure the POWERDI1012-8 footprint matches your PCB layout guidelines before finalizing procurement orders.

Selection Notes

Select this component when an 80V N-channel MOSFET with high current handling capability is required. The low RDS(ON) specification minimizes conduction losses, while the +175°C rating allows for reliable operation in thermally constrained environments. Verify that the gate threshold voltage and total gate charge align with your driver circuit capabilities for optimal switching performance.

Part Context

This part belongs to the DMTH series of advanced N-channel MOSFETs designed by Diodes Incorporated. It utilizes the POWERDI1012-8 surface-mount package, which provides enhanced thermal dissipation through its exposed drain pad. The 'WQ' designation indicates compliance with RoHS directives and halogen-free manufacturing processes.

Replacement Considerations

Consult official Diodes Incorporated cross-reference lists for verified substitutes. Do not assume pin-compatible replacements without verifying electrical parameters such as BVDSS, ID, and RDS(ON).