DMTH8008LFG-7

$0.42

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d80fa423d8f7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：37.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2254 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH8008LFG-7

Overview

The DMTH8008LFG-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, rated for a drain-source voltage of 80V. It features a low on-state resistance of 6.9mΩ at VGS=10V and 10.4mΩ at VGS=4.5V. The device supports a continuous drain current of 70A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI3333-8 surface-mount format, it includes total gate charge values of 37.7nC at VGS=10V and 18.3nC at VGS=4.5V.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Minimizes on-state losses through low RDS(ON) while maintaining superior switching performance
Occupies only 33% of the board area compared to SO-8 packages, enabling smaller end products
Manufactured with a thermally efficient PowerDI3333-8 package for higher density applications

Applications

Backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify that the specific ordering suffix matches the required packing quantity, as the datasheet lists distinct part numbers for different reel sizes. Confirm compliance requirements such as RoHS and halogen-free status directly against the manufacturer's quality definitions. Ensure the selected component aligns with the intended thermal management strategy given the specified power dissipation ratings.

Selection Notes

Select this component when designing circuits requiring high-efficiency power management with compact footprint constraints. Evaluate the thermal resistance characteristics based on the expected PCB copper area and ambient conditions. Consider the gate threshold voltage variations across the operating temperature range to ensure reliable switching under all load conditions.

Part Context

This device belongs to the DMTH series of N-channel enhancement mode MOSFETs designed by Diodes Incorporated. It utilizes advanced silicon technology to achieve low on-resistance and excellent switching figures of merit. The product line emphasizes reliability through rigorous testing protocols including unclamped inductive switching verification.