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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：31.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH8008SFGQ is an N-channel enhancement mode MOSFET designed for automotive applications, qualified to AEC-Q101. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 68A at TC = +25°C. The device offers a low static drain-source on-resistance (RDS(ON)) of 7mΩ at VGS = 10V and 10.5mΩ at VGS = 6V. Total gate charge (Qg) is 31.7nC at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Low RDS(ON) minimizes on-state power losses
- Excellent Figure of Merit (FOM) defined by Qgd × RDS(ON)
- Advanced technology optimized for DC-DC converter applications
Applications
- Automotive backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (-7 or -13) matches the required tape and reel quantity. Confirm that the component meets the PPAP requirements necessary for your specific automotive assembly line. Ensure the design accommodates the PowerDI3333-8 package dimensions and thermal pad layout as specified in the mechanical data section of the datasheet.
Selection Notes
Select this part when an 80V rating is sufficient and high current handling near 68A is required. The low RDS(ON) makes it efficient for power management. Consider the +175°C rating if the application environment exceeds standard industrial temperatures. Verify that the gate drive voltage supports the 6V or 10V RDS(ON) specifications effectively.
Part Context
This component belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI3333-8 package, which occupies only 33% of the board area compared to SO-8 packages. This compact form factor enables higher density end products while maintaining thermally efficient performance for demanding automotive electronics.
Replacement Considerations
Check for DMT8008LFG-7 or DMN4008LFG-7 if lower voltage ratings are acceptable. Verify pinout compatibility with the PowerDI3333-8 footprint before substitution. Ensure any replacement also meets AEC-Q101 qualification if used in automotive contexts.
