ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMTH8008SPSQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source breakdown voltage and a maximum continuous drain current of 92A at +25°C case temperature. The device exhibits a low on-resistance of 7.8mΩ at VGS=10V and 11mΩ at VGS=6V. It supports a junction temperature range of -55°C to +175°C and includes a body diode with a forward voltage of 1.2V maximum.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Manufactured in IATF 16949 certified facilities with AEC-Q101 qualification and PPAP capability
- Includes 100% unclamped inductive switching (UIS) testing during production for enhanced reliability
Applications
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets RoHS 3 compliance standards and ensure the application environment aligns with the specified thermal resistance values for both FR-4 single-sided and multi-layer copper plate mounting scenarios.
Selection Notes
Select this component when designing automotive circuits requiring robust performance under high ambient temperatures. The PowerDI5060-8 package provides efficient thermal dissipation through the exposed drain pad. Ensure gate drive voltages are sufficient to achieve the minimum on-resistance specifications required for optimal conversion efficiency in power management designs.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs designed by Diodes Incorporated. It utilizes silicon technology within a molded plastic 'Green' molding compound package. The device is lead-free, halogen-free, and antimony-free, adhering to strict environmental directives while maintaining high electrical performance for demanding industrial and automotive applications.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching BVDSS, RDS(ON), ID ratings, and package dimensions to ensure functional compatibility without altering circuit design parameters.
