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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8008SPSWQ-13 is an N-channel enhancement mode MOSFET rated for a drain-source voltage of 80V. It features a maximum on-resistance of 7.8mΩ at VGS=10V and supports a continuous drain current of 92A at TC=+25°C. The device operates within a temperature range of -55°C to +175°C and utilizes the PowerDI5060-8/SWP package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
Applications
- DC-DC converters
- Load switches
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated channels. Confirm that the specific ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with RoHS 3 and REACH regulations as specified in the official datasheet documentation before finalizing procurement orders.
Selection Notes
Select this component for high ambient temperature environments requiring robust switching performance. Evaluate thermal resistance characteristics against system heat dissipation capabilities. Verify gate threshold voltage compatibility with available drive signals to ensure reliable turn-on behavior under varying load conditions.
Part Context
This part belongs to the DMTH series of automotive-grade power MOSFETs manufactured by Diodes Incorporated. It is produced in IATF 16949 certified facilities, ensuring strict quality control measures are applied during the manufacturing process for consistent reliability in demanding electronic systems.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pin configurations and electrical parameters carefully when evaluating potential replacement components to maintain circuit integrity.
