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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 28.5A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：28.5A (Tc)
- Rds On (Max) @ Id, Vgs：26mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：631pF @ 40V
- Power - Max：3.1W (Ta), 41W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH8030LPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features an 80V drain-source voltage rating and operates up to +175°C junction temperature. At VGS = 10V, the maximum on-resistance is 26mΩ with a continuous drain current of 28.5A. At VGS = 4.5V, the resistance increases to 45mΩ max, supporting 21A. The device includes wettable flank pads for optical inspection and is lead-free, RoHS compliant, and halogen/antimony free.
Feature Summary
- Dual N-channel configuration within a single compact PowerDI5060-8/SWP package
- Wettable flank design enables improved optical solder joint inspection
- Rated for high ambient temperatures with operation up to +175°C
- Manufactured using low on-resistance technology for high efficiency
Applications
- DC-DC converters
- Motor control systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier format. Confirm compliance requirements such as RoHS 3 and REACH status against current project specifications. Ensure the selected component matches the standard DMTH8030LPDW datasheet rather than the automotive-compliant variant, which is documented separately.
Selection Notes
Select this component when a dual N-channel topology is required in a space-constrained surface-mount application. The 80V rating suits low-voltage power distribution networks. Verify that the gate drive voltage meets the 4.5V or 10V thresholds to achieve the specified on-resistance and current handling capabilities under expected thermal conditions.
Part Context
This part belongs to Diodes Incorporated's PowerDI series, designed for high-efficiency power management. The DMTH8030LPDW utilizes a specialized mold compound and copper leadframe to optimize thermal performance. It serves as a non-automotive grade alternative to the DMTH8030LPDWQ, which holds separate automotive qualification documentation.
Replacement Considerations
No official substitutes are listed in the documentation. When evaluating alternatives, ensure the replacement supports the dual N-channel architecture and the PowerDI5060-8/SWP footprint. Verify that the new component offers comparable RDS(ON) values at the target gate drive voltages and maintains the +175°C operating temperature rating.
