DMTH8030LPDWQ-13

$1.21

Description：MOSFET 2N-CH 80V 28.5A PWRDI50
Series：-

SKU:6d5e01c63169 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 80V 28.5A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：80V
Current - Continuous Drain (Id) @ 25°C：28.5A (Tc)
Rds On (Max) @ Id, Vgs：26mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：631pF @ 40V
Power - Max：3.1W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：Automotive
Qualification：AEC-Q101

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DMTH8030LPDWQ-13

Overview

The DMTH8030LPDWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features an 80V drain-source voltage rating and operates up to +175°C junction temperature. The device utilizes PowerDI5060-8/SWP packaging with wettable flank terminals. Electrical characteristics include a maximum on-resistance of 26mΩ at VGS=10V and 45mΩ at VGS=4.5V. Continuous drain current reaches 28.5A at TC=+25°C. Total gate charge is 10.4nC at VGS=10V, supporting fast switching speeds.

Feature Summary

Qualified to AEC-Q101 standards with PPAP support for automotive environments
Wettable flank terminals enable improved optical inspection of solder joints
Rated for high ambient temperatures with operation up to +175°C
100% unclamped inductive switching (UIS) tested in production

Applications

DC-DC converters
Motor control systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets RoHS 3 directives and is classified as a Halogen and Antimony-free 'Green' device. Ensure the IATF 16949 certified manufacturing origin aligns with your supply chain requirements for automotive-grade parts.

Selection Notes

Select this component when designing circuits requiring dual N-channel configurations within a compact PowerDI5060-8 footprint. The low thermal resistance from junction to case facilitates efficient heat dissipation in high-current scenarios. Verify that the system's gate drive voltage supports the specified RDS(ON) thresholds at both 10V and 4.5V operating conditions.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered for robust performance in demanding electrical environments. The DMTH8030LPDWQ series integrates advanced silicon technology to minimize conduction losses while maintaining high reliability under thermal stress and inductive load switching conditions.

Replacement Considerations

No official substitute part numbers are documented in the datasheet. When evaluating alternatives, ensure the replacement matches the 80V BVDSS rating, maintains comparable RDS(ON) values, and fits the PowerDI5060-8/SWP package dimensions. Verify that any cross-reference also holds AEC-Q101 qualification if required for the application.