DMTH84M1SPS-13

$0.66

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e713201751f6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4209 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH84M1SPS-13

Overview

The DMTH84M1SPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source voltage rating and a maximum continuous drain current of 100A at TC = +25°C. The device exhibits a low static drain-source on-resistance of 4mΩ at VGS = 10V and ID = 20A. It supports a junction temperature range of -55°C to +175°C and includes a total power dissipation capacity of 136W when mounted directly to the case.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Manufactured with lead-free finish and complies with RoHS directives
Verified robustness through 100% unclamped inductive switching (UIS) testing during production

Applications

DC-DC converters
Load switch circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high conversion efficiency and minimized on-state losses. Ensure the design accommodates the specified thermal resistance values and gate threshold voltage ranges to maintain optimal switching performance under varying load conditions.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which provides a compact footprint while maintaining effective thermal management capabilities for power electronics applications.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without cross-referencing datasheet parameters.

FAQ

Is the DMTH84M1SPS-13 suitable for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific change control requirements.