DMTH84M1SPSQ-13

$2.47

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:977583b3d3af Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4209 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH84M1SPSQ-13

Overview

The DMTH84M1SPSQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source breakdown voltage and a maximum continuous drain current of 100A at TC = +25°C. The device exhibits a low on-resistance of 4mΩ at VGS = 10V and 20A. It supports junction temperatures up to +175°C and includes thermal resistance ratings of 1.1°C/W (junction-to-case) and 96°C/W (junction-to-ambient).

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Rated for operation in high ambient temperature environments up to +175°C.
Manufactured in IATF 16949 certified facilities to meet specific change control requirements.
Features 100% unclamped inductive switching (UIS) testing in production for robustness.

Applications

DC-DC converters
Load switches

Procurement Notes

Verify the complete part number including the -13 suffix to confirm tape and reel packaging quantities. Confirm that the intended application environment aligns with the specified operating temperature range and thermal management requirements. Ensure compliance with RoHS 3 and REACH directives as documented by the manufacturer.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount footprint. Consider the low on-resistance for minimizing conduction losses in power conversion stages. Evaluate the thermal performance characteristics against the specific PCB layout and heat dissipation constraints of the target system.

Part Context

This device belongs to the DMTH series of automotive-grade MOSFETs designed for demanding power management applications. It utilizes silicon technology to deliver high efficiency and reliability. The PowerDI5060-8 package provides enhanced thermal performance compared to standard plastic packages, supporting higher power densities in space-constrained designs.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent parts or direct replacements. Cross-referencing should be performed carefully to ensure compatibility with voltage, current, and thermal specifications.