DMTH84M1SPSWQ-13

$0.74

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4a18e56db470 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4209 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH84M1SPSWQ-13

Overview

The DMTH84M1SPSWQ is an N-channel enhancement mode MOSFET designed for automotive applications, qualified to AEC-Q101. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 100A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 4mΩ max at VGS = 10V and ID = 20A. It operates within a junction temperature range of -55°C to +175°C and is housed in a PowerDI5060-8/SWP package.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
100% unclamped inductive switching (UIS) tested in production for robustness
Low RDS(ON) minimizes on-state power losses
High conversion efficiency

Applications

DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier with a packing quantity of 2500 units. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if your application demands automotive change control protocols. Ensure compatibility with IATF 16949 certified manufacturing facilities.

Selection Notes

Select this component when an 80V rating and high current handling capability are required in a compact surface-mount footprint. The PowerDI5060-8 package provides efficient thermal dissipation through the exposed drain pad. Consider the low gate charge characteristics for driving efficiency in high-frequency switching applications.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically utilizing the PowerDI®5060-8/SWP (Type UX) package. It is manufactured in IATF 16949 certified facilities and supports green product definitions by being halogen and antimony free.