DMWS120H100SM4

$17.19

Description：SIC MOSFET BVDSS: >1000V TO247-4
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:c173a342bd6b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET BVDSS: >1000V TO247-4
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1516 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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DMWS120H100SM4

Overview

The DMWS120H100SM4 is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a typical on-resistance of 80mΩ at VGS=15V, with a maximum rating of 100mΩ. The device supports a continuous drain current of 37.2A at TC=+25°C and 23.5A at TC=+100°C. Total gate charge is typically 59.5nC, while the junction-to-case thermal resistance is rated at 0.6°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
Includes a lead-free finish that is RoHS compliant, halogen-free, and antimony-free.

Applications

Data centers and telecom power supplies
Industrial motor drives
DC-DC converters
Solar inverters
EV battery chargers

Procurement Notes

Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement. Confirm that the TO247-4 package dimensions and pinout match the design requirements. Ensure compliance with environmental directives such as RoHS and REACH if applicable to the target market. Validate thermal management solutions based on the specified junction-to-case thermal resistance values.

Selection Notes

Select this component when designing systems requiring high-voltage operation up to 1200V with optimized conduction losses. Consider the 0.6°C/W thermal resistance for heatsink calculations in industrial or automotive environments. Evaluate the 59.5nC total gate charge against available driver capabilities to ensure efficient switching transitions. Verify that the operating temperature range meets the environmental constraints of the intended application.

Part Context

This part belongs to the DMWS120H series of N-channel SiC MOSFETs from Diodes Incorporated. The series utilizes silicon carbide technology to achieve lower on-resistance compared to traditional silicon devices. The TO247-4 package provides robust mechanical stability and efficient thermal dissipation for high-power density designs.

Replacement Considerations

Consult the manufacturer's official cross-reference list for verified substitutes. Ensure any replacement maintains the 1200V rating and compatible TO247-4 footprint. Verify that thermal and electrical characteristics meet or exceed the original specifications.