ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
- Rds On (Max) @ Id, Vgs：23mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id：3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs：217 nC @ 18 V
- Vgs (Max)：+22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：3962 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
Download product information
Overview
The DMWSH120H23SM3 is a silicon carbide (SiC) MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage exceeding 1000V and utilizes a TO-247 package. The device is supplied in tubes containing 30 pieces per factory pack.
Feature Summary
- Utilizes silicon carbide technology for high-voltage operation
- Designed for industrial-grade applications requiring robust performance
Applications
- Industrial motor drives
- Solar inverters
- DC-DC converters
Procurement Notes
Verify the specific datasheet revision to confirm exact electrical parameters such as on-resistance and gate charge, as these values define thermal and switching performance. Ensure the TO-247 pinout matches the target PCB footprint. Confirm RoHS compliance status through official documentation before finalizing component selection for regulated markets.
Selection Notes
Select this component when designing circuits requiring high-efficiency power switching at voltages above 1000V. Consider the thermal management requirements associated with the TO-247 package. Evaluate the gate drive requirements against the device's input capacitance to optimize switching speed and minimize losses in the application circuit.
Part Context
This part belongs to Diodes Incorporated's portfolio of silicon carbide MOSFETs. These devices are engineered to replace traditional silicon counterparts in high-power systems, offering superior thermal conductivity and higher operating temperatures. The product line targets modern power electronics demanding increased energy efficiency and reduced system size.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same series or from other manufacturers. Verify that any substitute maintains identical pin configurations and meets or exceeds the original voltage and current ratings.
