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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：97.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：28.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs：175 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：3905 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：405W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The DMWSH120H28SM3 is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a typical static drain-source on-resistance of 20mΩ at VGS=15V, with a maximum rating of 28.5mΩ. The device supports a continuous drain current of 97.4A at TC=+25°C and 68.8A at TC=+100°C. Total gate charge is typically 175nC. It utilizes a TO-247 package with a junction-to-case thermal resistance of 0.37°C/W and operates within a temperature range of -55°C to +175°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
- Constructed with a molded plastic 'Green' molding compound that is halogen and antimony free.
Applications
- EV high-power DC-DC converters
- EV charging systems
- AC-DC traction inverters
- Automotive motor drivers
Procurement Notes
Verify the specific part number against official manufacturer documentation to ensure correct specifications. Confirm RoHS compliance status and packaging details directly with authorized distributors or the manufacturer. Ensure the component meets all relevant automotive and industrial standards required for your specific design implementation before finalizing procurement.
Selection Notes
Select this component for designs requiring high-voltage handling and low conduction losses in silicon carbide applications. Consider the thermal management requirements based on the specified junction-to-case resistance and power dissipation limits. Evaluate the switching energy characteristics against system efficiency targets and gate drive capabilities to optimize performance.
Part Context
This SiC MOSFET belongs to Diodes Incorporated's portfolio of wide-bandgap semiconductor devices. It is engineered to replace traditional silicon-based solutions in high-frequency and high-temperature environments. The device offers improved energy efficiency and reduced system size compared to conventional MOSFETs operating at similar voltage levels.
Replacement Considerations
An automotive-compliant version of this component is available under the separate datasheet designation DMWSH120H28SM3Q. Verify if automotive qualification standards are required for the target application when considering this alternative.
FAQ
What is the maximum continuous drain current at an elevated case temperature?
The maximum continuous drain current is 68.8A when the case temperature is maintained at +100°C.
How does the on-resistance vary with junction temperature?
The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance versus junction temperature graphs provided in the datasheet.
