DMWSH120H43SM3Q

Overview

The DMWSH120H43SM3Q is a 1200V N-channel Silicon Carbide power MOSFET designed for high-efficiency power management. It features a maximum drain-source breakdown voltage of 1200V and a typical on-resistance of 33mΩ at VGS=15V, with a maximum rating of 43mΩ. The device supports a continuous drain current of 70.5A at TC=+25°C and 49.8A at TC=+100°C. Total gate charge is typically 118nC, while turn-on and turn-off switching energies are 1492µJ and 427µJ respectively under standard test conditions. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Engineered to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
• Qualified for automotive applications requiring specific change control, including AEC-Q101 qualification and PPAP capability.
• Manufactured in IATF 16949 certified facilities to ensure consistent quality standards.
• Features low input capacitance and a high BVDSS rating suitable for demanding power application environments.

Applications

• EV high-power DC-DC converters
• EV charging systems
• AC-DC traction inverters
• Solar inverters
• Automotive motor drivers

Procurement Notes

Verify the complete part number against official Diodes Incorporated documentation before procurement. Confirm that the 'Q' suffix aligns with your specific automotive qualification requirements, as it denotes AEC-Q101 compliance and PPAP capability. Ensure the TO247 package type matches your thermal and mechanical design constraints. Cross-reference datasheet revision DS46494 Rev. 2-2 for accurate electrical parameters.

Selection Notes

Select this component when designing circuits requiring high-voltage handling with minimized conduction losses. The 1200V rating provides robustness against voltage transients common in electric vehicle and industrial power systems. Consider the thermal resistance characteristics and the need for adequate heatsinking to maintain junction temperatures within the specified operating range during continuous operation.

Part Context

This device belongs to the DMWSH120H series of silicon carbide MOSFETs from Diodes Incorporated. The series is characterized by its focus on reducing on-resistance without compromising switching speed. The DMWSH120H43SM3Q specifically targets applications where high reliability and automotive-grade certification are mandatory, distinguishing it from standard industrial-grade counterparts through its rigorous qualification processes.

Replacement Considerations

Direct replacements must match the 1200V rating, TO247 package, and similar RDS(ON) specifications. Verify pinout compatibility and thermal resistance values. Automotive applications require checking if alternative parts meet AEC-Q101 and PPAP requirements. Consult the manufacturer's substitution guide for validated alternatives.

FAQ

What is the recommended operating gate-source voltage range?

The recommended operating gate-source voltage range is +15V to -4V, distinct from the absolute maximum ratings of +19V and -8V.

Is this component suitable for high-temperature automotive environments?

Yes, the device is qualified for automotive applications and supports an operating junction temperature range up to +175°C.

How does the body diode perform in terms of reverse recovery?

The body diode exhibits a typical reverse-recovery time of 13.5ns and a reverse-recovery charge of 158nC under standard test conditions (VDS=800V, ID=40A).