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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：72.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：43mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 11.5mA
- Gate Charge (Qg) (Max) @ Vgs：105 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：2187 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：341W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The DMWSH120H43SM4 is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a continuous drain current of 72.7A at 25°C. The device exhibits a typical on-resistance of 33mΩ and a maximum of 43mΩ at VGS=15V. Key electrical parameters include a gate threshold voltage of 2.5V, total gate charge of 105nC, and a maximum junction temperature of 175°C. It utilizes a TO-247-4 package with a thermal resistance from junction to case of 0.44°C/W.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance and superior switching performance.
- Features low input capacitance and a high breakdown voltage rating suitable for demanding power applications.
- Constructed with a lead-free finish that is RoHS compliant and halogen/antimony free.
Applications
- EV high-power DC-DC converters
- EV charging systems
- AC-DC traction inverters
- Automotive motor drivers
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging and configuration. Confirm compliance requirements such as AEC-Q100 qualification or IATF 16949 manufacturing standards if intended for automotive use. Cross-reference datasheet revision numbers to validate technical specifications prior to integration.
Selection Notes
Select this component based on its 1200V rating and low on-resistance characteristics required for high-voltage silicon carbide applications. Evaluate the thermal management capabilities relative to the specified junction-to-case thermal resistance. Ensure the gate drive circuitry supports the recommended static gate-source voltage limits for optimal switching performance.
Part Context
This part belongs to the DMWSH series of N-channel SiC MOSFETs from Diodes Incorporated. These devices are engineered to provide robust performance in high-frequency and high-temperature environments. The series targets advanced power conversion systems requiring high reliability and efficiency.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Verify pinout compatibility, specifically the driver source terminal in the TO-247-4 package, and confirm equivalent electrical ratings before considering any cross-references.
FAQ
What is the difference between static and dynamic gate-source voltage ratings?
The static gate-source voltage rating is +15V/-4V, while the dynamic rating allows for transient spikes up to +19V/-8V during switching operations.
How does the package configuration support driver circuits?
The TO-247-4 package includes a dedicated 'K' pin labeled as Driver Source, which facilitates accurate gate drive referencing and minimizes parasitic inductance effects.
