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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：44.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
- Rds On (Max) @ Id, Vgs：80.5mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id：3.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：59.1 nC @ 18 V
- Vgs (Max)：+22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：1069 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：238W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The DMWSH120H80SM3 is a silicon carbide (SiC) MOSFET manufactured by Diodes Incorporated. It features an N-channel configuration housed in a TO-247-3 through-hole package. The device is rated for a drain-source breakdown voltage (BVDSS) exceeding 1000V, specifically 1200V. It supports a continuous drain current of 44.5A at case temperature and handles a power dissipation of 238W at case temperature.
Feature Summary
- Utilizes silicon carbide technology to minimize on-resistance while maintaining switching performance
- Designed for high-voltage applications with BVDSS greater than 1000V
- Single N-channel enhancement mode transistor configuration
Applications
- High-efficiency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Diodes Incorporated or authorized distributors before procurement. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 238W power dissipation rating under your operating conditions.
Selection Notes
Select this component when designing circuits requiring robust high-voltage handling capabilities with low conduction losses. The TO-247-3 package facilitates efficient heat sinking for high-power density designs. Consider the 44.5A continuous current rating against your peak load requirements and ambient temperature constraints to ensure reliable operation within the specified junction temperature range.
Part Context
This part belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series is engineered to optimize the trade-off between on-resistance and switching speed. Other variants in the family include different on-resistance ratings such as the DMWSH120H90SM4Q and DMWSH120H37SM4Q, offering choices based on specific efficiency and cost targets.
Replacement Considerations
Direct replacements within the same series include DMWSH120H90SM4Q and DMWSH120H37SM4Q. Verify pin compatibility and thermal characteristics when substituting. Ensure the alternative part's on-resistance and gate charge parameters align with your circuit's efficiency and drive requirements.
