DMWSH120H90SCT7

$5.31

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:83c286604dd2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：38.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：54.6 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1078 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：197W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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DMWSH120H90SCT7

Overview

The DMWSH120H90SCT7 is a silicon carbide (SiC) MOSFET manufactured by Diodes Incorporated. It features an N-channel configuration housed in a TO-263-7 surface-mount package. The device is rated for a drain-source breakdown voltage exceeding 1000V, specifically 1200V. Key electrical parameters include a continuous drain current of 38.2A at case temperature and a maximum power dissipation of 197W at case temperature. The component operates within a junction temperature range from -55°C to +175°C.

Feature Summary

Utilizes silicon carbide technology to achieve high thermal stability and low on-resistance.
Designed for surface-mount applications with a robust TO-263-7 package.
Engineered to maintain excellent switching performance under high-voltage conditions.

Applications

High-efficiency power conversion systems
Industrial motor drives
Uninterruptible power supplies

Procurement Notes

Verify the specific suffix variant against official Diodes Incorporated documentation, as packaging options such as tape-and-reel or tube configurations may exist for this part family. Confirm RoHS compliance status through the manufacturer's product compliance database prior to integration. Ensure the selected package matches the intended PCB footprint design requirements.

Selection Notes

Select this component when designing circuits requiring high-voltage handling capabilities with efficient thermal management in a surface-mount form factor. Evaluate the thermal resistance characteristics relative to the system's cooling infrastructure. Compare the on-state resistance and gate charge specifications against alternative SiC devices to optimize overall system efficiency and switching losses.

Part Context

This device belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series is designed to minimize on-resistance while preserving superior switching performance. These components are part of the broader discrete semiconductor transistor portfolio focused on advanced power electronics solutions.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same product family. Verify that any substitute maintains identical voltage ratings, current capabilities, and package dimensions to ensure seamless integration without redesigning the host circuit board.