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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：97.5mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：47.6 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1112 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：235W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The DMWSH120H90SM4Q is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a continuous drain current of 40A at 25°C. The device exhibits a typical on-resistance of 75mΩ and a maximum of 97.5mΩ at VGS=15V. Key electrical parameters include a gate charge of 51.1nC, turn-on delay time of 9.1ns, and fall time of 6.4ns. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO247-4 through-hole package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Includes an additional Kelvin source pin in the TO247-4 package to optimize switching efficiency and reduce parasitic inductance.
- Qualified for automotive applications with AEC-Q101 certification, PPAP capability, and manufacturing in IATF 16949 certified facilities.
Applications
- EV high-power DC-DC converters
- EV charging systems
- AC-DC traction inverters
- Automotive motor drivers
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the TO247-4 package matches the required pin configuration, specifically identifying the dedicated Kelvin source terminal. Ensure compliance with RoHS directives and confirm suitability for the intended operating temperature range before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high-voltage handling up to 1200V combined with low conduction losses. The specific inclusion of a Kelvin source pin makes it suitable for applications demanding precise gate drive control to minimize switching losses. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance for the target power dissipation levels.
Part Context
This part belongs to the DMWSH120H series of 1200V N-channel SiC MOSFETs from Diodes Incorporated. The series is engineered for industrial and automotive power electronics, offering a balance of low on-resistance and fast switching speeds. The TO247-4 packaging provides robust mechanical stability and efficient heat dissipation capabilities for high-power density designs.
Replacement Considerations
Direct substitutes within the same family include DMWSH120H80SM4Q and DMWSH120H100SM4Q. Verify compatibility by comparing on-resistance values and gate charge specifications to ensure equivalent switching performance and thermal characteristics in the existing circuit design.
FAQ
What is the function of the fourth pin in the TO247-4 package?
The fourth pin serves as a Kelvin source connection, which is separated from the main source terminal to allow for accurate gate drive sensing and improved switching performance.
Is this component qualified for automotive use?
Yes, the DMWSH120H90SM4Q is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.
