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Product Detailed Parameters
- Description：MOSFET N-CH 250V 1.1A TO252
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 1A, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：7.04 nC @ 1.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DN2625K4-G is a single N-Channel Depletion-mode Vertical DMOS FET in a TO-252 D-PAK package. It features a drain-to-source breakdown voltage of 250 V, an off-state gate-to-source voltage maximum of -2.1 V, and a pulsed drain current capability of 3.3 A. The device exhibits a static on-resistance of 3.5 Ω at 1 A and operates within an ambient temperature range of -55°C to +150°C.
Feature Summary
- Utilizes advanced vertical DMOS structure for high input impedance and positive temperature coefficient.
- Features very low gate threshold voltage designed specifically for source-driven applications.
- Provides low switching losses and low effective output capacitance for fast switching speeds.
- Free from thermal runaway and thermally induced secondary breakdown.
Applications
- Medical Ultrasound Beamforming
- Ultrasonic Array-focusing Transmitter
- Piezoelectric Transducer Waveform Drivers
- High-speed Arbitrary Waveform Generator
- Solid-state Relays
Procurement Notes
Verify the specific suffix 'K4' corresponds to the TO-252 D-PAK package configuration. Confirm that the 'G' designation indicates lead-free and RoHS-compliant manufacturing standards as specified by Microchip Technology. Ensure compatibility with the required PCB footprint and thermal management solutions for the selected package type.
Selection Notes
Select this component when a normally-on switch or amplifier requires high breakdown voltage and fast switching characteristics. Consider the depletion-mode operation which remains conductive at zero gate bias. Evaluate the thermal resistance requirements against the expected continuous and pulsed drain currents for the specific application environment.
Part Context
This part belongs to the DN2625 family of N-Channel Depletion-mode Vertical DMOS FETs manufactured by Microchip Technology. The K4 suffix identifies the single-transistor variant housed in a TO-252 D-PAK package, distinct from the dual-transistor DK6 variant.
Replacement Considerations
DN2625DK6-G
FAQ
What is the default state of the DN2625K4-G transistor?
The DN2625K4-G is a depletion-mode (normally-on) transistor, meaning it conducts current between the drain and source when the gate-to-source voltage is zero.
How does the DN2625K4-G handle thermal conditions?
The device is free from thermal runaway and thermally induced secondary breakdown due to its Metal-Oxide Semiconductor structure and positive temperature coefficient.
