DN3545N3-G

$0.77

Description：MOSFET N-CH 450V 136MA TO92
Series：-
Mfr：Microchip Technology
Package：Bag

SKU:28c16cf2b2a9 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 136MA TO92
Series：-
Mfr：Microchip Technology
Package：Bag
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：136mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：20Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：740mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92 (TO-226)
Package / Case：TO-226-3, TO-92-3 (TO-226AA)

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DN3545N3-G

Overview

The DN3545N3-G is an N-Channel Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a 450V drain-to-source breakdown voltage and a maximum on-resistance of 20 Ohms at 150mA. The device operates within a temperature range of -55°C to +150°C, with a continuous drain current of 136mA in the TO-92 package. Key electrical parameters include a gate-to-source voltage limit of ±20V, forward transconductance of 150 mmho, and input capacitance of 360pF.

Feature Summary

Utilizes advanced vertical DMOS structure for high power-handling capabilities combined with MOS high-input impedance.
Free from thermal runaway and thermally induced secondary breakdown due to positive-temperature coefficient characteristics.
Designed for fast switching speeds with low input and output leakage currents.

Applications

Normally-On Switches
Solid-State Relays
Linear Amplifiers
Constant-Current Sources
Power Supply Circuits

Procurement Notes

Verify the specific ordering suffix 'N3' corresponds to the 3-lead TO-92 package configuration as defined in the product identification system. Confirm RoHS compliance status via the 'G' designation. Ensure the procurement channel provides official datasheet DS20005438A for accurate technical validation before integration into designs.

Selection Notes

Select this component when high breakdown voltage and normally-on operation are required. The TO-92 package limits continuous current to 136mA; consider alternative packages like SOT-89 if higher pulsed current or thermal dissipation is needed. Verify that the depletion mode behavior aligns with the circuit's default state requirements.

Part Context

This part belongs to the DN3545 family of N-Channel Depletion-Mode Vertical DMOS FETs. The 'N3' suffix specifically denotes the 3-lead TO-92 through-hole package variant. Other variants in the series include the SOT-89 package (DN3545N8-G), offering different thermal and current handling characteristics while maintaining identical electrical performance.