DN3545N8-G

$0.84

Description：MOSFET N-CH 450V 200MA TO243AA
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:54508f487ec4 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 200MA TO243AA
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：20Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-243AA (SOT-89)
Package / Case：TO-243AA

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DN3545N8-G

Overview

The DN3545N8-G is an N-Channel Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 450 V and a maximum on-state resistance of 20 Ω. The device operates within an ambient temperature range of -55°C to +150°C. Key electrical characteristics include a saturated drain current of 200 mA, a gate-to-source off voltage between -1.5 V and -3.5 V, and forward transconductance of 150 mmho. Input capacitance is typically 360 pF. The component is housed in a 3-lead SOT-89 (TO-243AA) surface-mount package.

Feature Summary

Utilizes advanced vertical DMOS structure for high power-handling capabilities combined with MOS high-input impedance.
Inherently free from thermal runaway and thermally induced secondary breakdown due to positive-temperature coefficient.
Designed for fast switching speeds with low input and output leakage currents.

Applications

Normally-On Switches
Solid-State Relays
Linear Amplifiers
Constant-Current Sources

Procurement Notes

Verify the specific suffix 'N8' confirms the SOT-89 package configuration required for your design. Ensure environmental compliance requirements match the 'G' designation for lead-free/RoHS status. Confirm that the operating voltage and current limits align with your circuit specifications before finalizing procurement orders.

Selection Notes

Select this component when a normally-on switch or amplifier requires high breakdown voltage and low on-resistance. The depletion mode operation necessitates a negative gate drive to turn off the device. Consider the thermal resistance and power dissipation limits relative to your expected load current and ambient temperature conditions.

Part Context

This part belongs to the DN3545 family of N-Channel Depletion-Mode Vertical DMOS FETs. The 'N8' suffix specifically denotes the 3-lead SOT-89 surface-mount package variant, distinguishing it from through-hole options like the TO-92 package found in other family members.