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Product Detailed Parameters
- Description：MOSFET N-CH 650V 300MA TO252-3
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：8Ohm @ 150mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：825 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DN3765K4-G is an N-Channel Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a TO-252 (D-PAK) package with a drain-to-source breakdown voltage of 650 V and a maximum on-resistance of 8.0 Ω at 150 mA. The device supports a continuous drain current of 300 mA and dissipates up to 2.5 W. Operating temperatures range from -55°C to +150°C, with a gate-to-source voltage limit of ±20 V.
Feature Summary
- Utilizes advanced vertical DMOS structure for high input impedance and low input capacitance
- Free from thermal runaway and thermally-induced secondary breakdown due to positive temperature coefficient
- Fast switching speeds suitable for high-frequency applications
Applications
- Normally-on switches
- Solid state relays
- Linear amplifiers
- Constant current sources
Procurement Notes
Verify the component matches the specific depletion-mode vertical DMOS FET designation. Confirm the TO-252 (D-PAK) package variant K4 corresponds to the required footprint. Ensure the lead-free and RoHS compliant status aligns with project specifications. Cross-reference the manufacturer marking code YYWWLLLLLLL for authenticity.
Selection Notes
Select this component for circuits requiring normally-on operation with high voltage handling capabilities. The vertical DMOS architecture provides bipolar-like power handling with MOSFET input characteristics. Consider the 8.0 Ω on-resistance and 300 mA continuous current limits when designing load paths. Verify thermal management requirements against the 81°C/W junction-to-ambient resistance.
Part Context
This part belongs to the DN3765 series of N-Channel Depletion-Mode Vertical DMOS FETs originally developed by Supertex Inc., now under Microchip Technology. The series is designed for applications demanding high breakdown voltage and fast switching. The K4 suffix indicates the specific TO-252 (D-PAK) surface-mount package configuration.
Replacement Considerations
Direct substitutes include other N-Channel Depletion-Mode Vertical DMOS FETs with comparable 650V BVDSX ratings and similar RDS(ON) values in a TO-252 package. Verify pinout compatibility and thermal resistance specifications before substitution.
