SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DSC5G0200L is an NPN silicon bipolar junction transistor manufactured by Panasonic Industry. It is housed in a compact SOT-23-3 surface-mount package designed for low-power switching and amplification applications. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a maximum emitter-base voltage (VEBO) of 5 V. It supports a continuous collector current of 100 mA with a power dissipation rating of 200 mW at room temperature. The minimum DC current gain (hFE) is specified at 25, ensuring reliable operation in standard digital and analog circuits.
Verify the specific manufacturer datasheet for the DSC5G0200L to confirm current production status and RoHS compliance details. As component availability fluctuates, consult authorized distributors for real-time stock levels and lead times. Ensure that the ordering suffix matches the required packaging format, such as cut tape or reel, before finalizing procurement orders.
Select this component when a small-form-factor NPN transistor is required with a 50 V collector-emitter breakdown voltage. The 100 mA current rating makes it suitable for driving small loads or interfacing with logic gates. Verify that the 200 mW power dissipation limit aligns with the thermal constraints of the target PCB layout and operating environment.
This part belongs to Panasonic's portfolio of small-signal bipolar transistors. These components are widely used in consumer electronics and industrial control systems where space efficiency and reliable switching characteristics are prioritized. The SOT-23-3 package allows for high-density mounting on printed circuit boards.
Publicly confirmed substitute part numbers for the DSC5G0200L were not identified in available documentation. Engineers should verify pinout compatibility and electrical parameter equivalence before substituting with other NPN SOT-23 devices.