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The DU2805S is an N-channel silicon RF MOSFET transistor manufactured by MACOM Technology Solutions. Designed for high-power radio frequency applications, this component operates within a frequency range up to 175 MHz. It delivers a continuous output power of 10 W at a drain voltage of 28 V. Key electrical specifications include a maximum drain-source breakdown voltage (Vds) of 65 V and a continuous drain current (Id) of 2.8 A. The device provides a gain of 13 dB and supports a maximum operating temperature of +200°C. It utilizes a screw mount installation style.
Verify the specific package type and pinout configuration against the official MACOM datasheet prior to PCB layout finalization. Confirm that the mounting hardware requirements align with the screw mount specification. Ensure thermal management solutions are adequate for the specified +200°C maximum junction temperature rating during system design validation.
Select the DU2805S when designing circuits requiring 10 W output power below 175 MHz. Consider its 65 V breakdown voltage for systems operating near or above standard 28 V rails. Evaluate the screw mount interface against available board space and mechanical constraints compared to surface-mount alternatives.
This component belongs to the MACOM RF MOSFET transistor family, which specializes in silicon-based devices for high-frequency power applications. These transistors are engineered to provide high linearity and efficiency in demanding RF environments, serving as core active elements in power amplifier stages across various communication and industrial sectors.
Consult the MACOM official documentation for verified cross-reference part numbers. Do not substitute based on generic parameter matching without confirming pin compatibility and thermal characteristics.