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The DU28200M is an N-Channel RF Power MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes Silicon DMOS technology and operates within a frequency range of 2 MHz to 175 MHz. The device provides a saturated output power of 200 W with a typical gain of 13 dB. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V, a continuous drain current (Id) of 40 A, and a maximum operating temperature of +200°C. It is designed for high-power radio frequency applications.
Verify the specific datasheet revision and package type before procurement, as MACOM product lines may undergo engineering changes. Confirm thermal management requirements align with the specified maximum junction temperature. Ensure compatibility with existing biasing networks for the 28V operational standard. Cross-reference part numbers with official MACOM documentation to avoid counterfeit components.
Select this component when high power output at 200W is required within the 2-175 MHz band. Compare against lower power variants like the DU2880 or higher power alternatives based on specific gain and efficiency needs. Consider the thermal resistance and mounting style suitable for screw-mount implementations. Evaluate the trade-off between gain and linearity for the intended modulation scheme.
This device belongs to the DU28 series of RF MOSFETs from MACOM, designed for robust performance in demanding RF environments. The series includes various power levels ranging from low wattage to multi-hundred watt outputs. These transistors are engineered for reliability in harsh conditions, supporting both commercial and military-grade applications through consistent silicon processing standards.
Direct replacements within the same family include the DU28200T if tape-and-reel packaging is preferred over the standard tray configuration. Verify pinout compatibility and thermal characteristics when substituting with other high-power RF MOSFETs from different manufacturers.