DXTN07045DFG-7

Single Bipolar Transistors Overview

The DXTN07045DFG-7 is a silicon NPN medium power high gain transistor manufactured by Diodes Incorporated. It operates within a collector-emitter voltage (VCEO) of 45 V and supports a continuous collector current (IC) of 3 A. The device features a minimum DC current gain (hFE) of 400 at IC = 1A and maintains a low saturation voltage (VCE(SAT)) below 300 mV under the same conditions. Thermal performance includes a maximum power dissipation of 3.1 W on a 50mm x 50mm 2oz copper board, with an operating temperature range spanning from -55°C to +175°C.

Single Bipolar Transistors Feature Summary

• High current gain exceeding 400 at 1A for efficient signal amplification
• Low saturation voltage below 300mV at 1A to minimize conduction losses
• Thermally efficient PowerDI3333-8 package enabling higher density designs
• Rated for operation up to +175°C suitable for high temperature environments

Single Bipolar Transistors Applications

• Load Switch
• Linear Regulator
• MOSFET or IGBT Gate Driving

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the required reel size and tape width configuration before procurement. Confirm that the component meets all applicable RoHS and halogen-free requirements as defined by the manufacturer's quality standards. Ensure the intended application does not involve life support systems without express written approval from the Chief Executive Officer of Diodes Incorporated.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high gain and robust thermal characteristics is required. The PowerDI3333-8 package offers a small form factor ideal for space-constrained designs. Consider the device's ability to operate at elevated temperatures up to +175°C and its capability to handle continuous currents up to 3A for appropriate circuit integration.

Single Bipolar Transistors Part Context

This part belongs to the DXTN series of medium power transistors designed for general-purpose switching and amplification applications. Manufactured using silicon technology, it utilizes the PowerDI surface-mount package family known for its thermal efficiency and wettable flank design, which facilitates improved optical inspection during assembly processes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.