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Product Detailed Parameters
- Description：SIC, MOSFET, 16M, 1200V, TO-247-
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：125A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：22mOhm @ 80.28A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 22.08mA
- Gate Charge (Qg) (Max) @ Vgs：223 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：6922 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：483W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The E3M0016120K is a Wolfspeed E-Series automotive-qualified N-channel enhancement mode Silicon Carbide MOSFET. It utilizes third-generation SiC technology in a TO-247-4L package with a separate driver source pin. Key electrical parameters include a 1200 V drain-source voltage, a maximum on-resistance of 22 mΩ at 25°C, and a continuous drain current of 125 A at 25°C case temperature. The device supports junction temperatures up to 175°C and features an optimized package for high creepage distance.
Feature Summary
- Third-generation SiC MOSFET technology
- Automotive qualified (AEC-Q101) and PPAP capable
- Optimized package with separate driver source pin
- High-speed switching with low capacitances
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify the specific ordering suffix K against the manufacturer's official documentation to confirm the exact package variant and marking. Confirm RoHS compliance status and REACH SVHC declarations directly with the supplier or through the product documentation section of the manufacturer's website prior to procurement.
Selection Notes
Select this component for high-voltage applications requiring automotive reliability and high power density. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and derating curves. Ensure gate drive circuits accommodate the recommended turn-on and turn-off voltages to optimize switching performance and minimize losses.
Part Context
This part belongs to the Wolfspeed E-Series discrete silicon carbide MOSFETs designed for onboard automotive applications. The series supports various topologies from hard-switching to resonant designs across 750 V, 1200 V, and 1700 V ratings. It is intended to improve efficiency, density, and reliability in electric vehicle power conversion systems.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other packages or voltage ratings without verifying pinout compatibility and electrical specifications against the datasheet.
