E3M0021120J2-TR

$30.69

Description：21m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aae09665e4ec Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：21m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：29mOhm @ 62.12A, 15V
Vgs(th) (Max) @ Id：3.8V @ 17.1mA
Gate Charge (Qg) (Max) @ Vgs：169 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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E3M0021120J2-TR

Overview

The E3M0021120J2 is an N-Channel Enhancement Mode Silicon Carbide Power MOSFET from Wolfspeed's E-Series. It features a TO-263-7XL package with a separate Kelvin source pin and 4.7mm creepage distance. Key electrical parameters include a 1200V drain-source voltage, 21mΩ on-resistance at 25°C, and 114A continuous drain current. The device supports junction temperatures up to 175°C and offers fast switching with low capacitances.

Feature Summary

Third-generation SiC MOSFET technology
Automotive qualified (AEC-Q101) and PPAP capable
Optimized package with separate driver source pin
High blocking voltage with low on-resistance

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific suffix J2 corresponds to the TO-263-7XL package configuration. Confirm AEC-Q101 qualification status for automotive integration requirements. Check RoHS compliance documentation for material restrictions. Ensure thermal management design aligns with the specified maximum junction temperature limits.

Selection Notes

Select this component for high-voltage applications requiring automotive reliability standards. Evaluate thermal resistance characteristics against system cooling capabilities. Consider the separate Kelvin source pin for precise gate drive control. Verify compatibility with existing PCB footprint dimensions for the TO-263-7XL package.

Part Context

This part belongs to Wolfspeed's E-Series discrete silicon carbide power MOSFETs. The series targets onboard automotive applications including BEVs, PHEVs, and FCEVs. It represents a legacy of proven durability and reliability within the manufacturer's portfolio.

Replacement Considerations

Consult official substitution guides for compatible Wolfspeed E-Series alternatives. Verify package pinout compatibility before replacing existing designs.