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Product Detailed Parameters
- Description：SICFET N-CH 900V 23A TO247-3
- Series：E-Series
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：17.3 nC @ 15 V
- Vgs (Max)：+18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：97W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The Wolfspeed E3M0120090D is a single N-channel Silicon Carbide (SiC) MOSFET from the C3M series. It features a drain-source voltage of 900 V and a continuous drain current of 23 A at case temperature. The device has a maximum on-resistance of 0.12 ohms and dissipates up to 97 W. Packaged in a TO-247-3 through-hole format, it operates between -55°C and 150°C with a typical gate charge of 17.3 nC.
Feature Summary
- Utilizes Silicon Carbide semiconductor technology for high-performance power switching.
Applications
- Power converter systems
- Inverter circuits
- Charger designs
Procurement Notes
Verify component authenticity and datasheet alignment when sourcing this part. Note that availability may be limited as the item is listed as obsolete by some distributors. Confirm package integrity and pin configuration before integration into final assemblies.
Selection Notes
Select this component for applications requiring robust high-voltage handling and efficient thermal management. The TO-247 package facilitates effective heat dissipation for moderate power levels. Ensure circuit design accommodates the specific gate charge characteristics and voltage ratings defined in the official specifications.
Part Context
This device belongs to the C3M series of discrete SiC MOSFETs manufactured by Wolfspeed. These components are engineered for high-efficiency power electronics, offering superior performance compared to traditional silicon devices in demanding electrical environments.
Replacement Considerations
Available substitutes include similar SiC MOSFETs from Wolfspeed. Verify electrical parameters such as voltage rating, current capacity, and package type to ensure compatibility with existing system requirements.
