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Product Detailed Parameters
- Description：MOSFETS 5128 PF 554W 3.8V 180 NC
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：156A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：21mOhm @ 55.8A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs：180 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：5128 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：554W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed E4M0015075J2-TR is an N-channel enhancement mode Silicon Carbide (SiC) MOSFET from the E-Series Automotive line. It features a 750V drain-source voltage rating and a TO-263-7XL package with a separate Kelvin source pin for optimized gate drive performance. The device offers a typical on-resistance of 21 mΩ at 25°C and supports continuous drain currents up to 140A at 25°C case temperature. It is designed for high-speed switching with low capacitances and fast intrinsic diode characteristics, operating within a junction temperature range of -55°C to +175°C.
Feature Summary
- Automotive qualified under AEC-Q101 standards and PPAP capable
- Optimized package design featuring a separate driver source pin to minimize gate ringing
- High blocking voltage combined with low on-resistance for improved system efficiency
- Fast intrinsic body diode with low reverse recovery charge
Applications
- Motor Control
- EV On Board Battery Chargers (OBC)
- Automotive DC/DC Converters for EV/HEV
Procurement Notes
Verify the specific ordering suffix '-TR' corresponds to the required tape and reel packaging configuration before finalizing procurement. Confirm that the component meets all necessary automotive quality requirements, including AEC-Q101 qualification status and PPAP capability, as these are critical for integration into automotive supply chains. Ensure compatibility with the intended thermal management solution given the power dissipation ratings.
Selection Notes
Select this component for applications requiring robust automotive-grade SiC performance in a surface-mount form factor. The separate Kelvin source pin facilitates precise gate control, reducing switching losses and electromagnetic interference. Consider the thermal resistance and current derating curves when designing heat sinks, as the device supports high peak currents but requires adequate cooling for continuous operation at elevated temperatures.
Part Context
This part belongs to Wolfspeed's E-Series Automotive portfolio, which focuses on silicon carbide technology for electric vehicle applications. The E4M0015075J2 variant specifically targets 750V systems, offering a balance of low on-state resistance and high breakdown voltage. It is engineered to replace traditional silicon IGBTs or MOSFETs in high-efficiency power conversion stages.
Replacement Considerations
Direct replacements should be sought from the Wolfspeed E-Series lineup with matching 750V ratings and TO-263-7XL packages. Verify pinout compatibility, particularly the separation of the power source and Kelvin source pins, to ensure proper circuit board layout adaptation without redesigning the gate drive network.
