E4M0045075K1

$10.70

Description：MOSFETS AUTOMOTIVE 139W 3.8V NC
Series：E
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:311b711d32e9 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFETS AUTOMOTIVE 139W 3.8V NC
Series：E
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：60mOhm @ 17.6A, 15V
Vgs(th) (Max) @ Id：3.8V @ 4.84mA
Gate Charge (Qg) (Max) @ Vgs：65 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1606 pF @ 500 V
FET Feature：-
Power Dissipation (Max)：139W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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E4M0045075K1

Overview

The Wolfspeed E4M0045075K1 is an N-channel enhancement mode Silicon Carbide MOSFET from the E-Series, designed for automotive applications. It features a TO-247-4L package with a separate driver source pin. Key electrical parameters include a 750 V drain-source voltage rating and a maximum on-state resistance of 60 mΩ at 25°C. The device supports continuous drain currents up to 40 A at 25°C case temperature and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Automotive qualified (AEC-Q101) and PPAP capable
Optimized package with separate driver source pin
High blocking voltage with low on-resistance
Fast intrinsic diode with low reverse recovery

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm that the specific order matches the E4M0045075K1 designation and TO-247-4L package marking. Ensure compliance with RoHS and REACH standards as documented in the datasheet. Validate suitability for the intended automotive application requirements before procurement.

Selection Notes

Select this component for high-efficiency power conversion systems requiring automotive reliability. The separate driver source pin aids in minimizing gate ringing and switching losses. Consider the thermal management capabilities provided by the TO-247-4L package and the device's ability to operate at high junction temperatures up to 175°C for optimal system performance.

Part Context

This part belongs to Wolfspeed's E-Series discrete Silicon Carbide Power MOSFETs. The series includes devices rated for 750 V, 1200 V, and 1700 V, targeting onboard automotive applications such as BEVs, PHEVs, and FCEVs. The E-Series leverages proven durability and reliability metrics suitable for demanding power electronics environments.