EC4H08C-TL-H

Overview

The EC4H08C-TL-H is an NPN epitaxial planar silicon transistor designed for UHF to X band low-noise amplifier and oscillator applications. It features a high cut-off frequency of 24 GHz typical at VCE=3V and a forward transfer gain of 17 dB typical at f=2GHz. Absolute maximum ratings include a collector-to-emitter voltage (VCEO) of 3.5 V, collector current (IC) of 15 mA, and collector dissipation (PC) of 50 mW. The device operates within a junction temperature range up to 150 °C and is housed in the ECSP1008-4 package.

Feature Summary

• High cut-off frequency suitable for UHF to X band operations
• Low operating voltage capability
• High gain performance at 2 GHz
• Halogen-free compliance

Applications

• UHF to X Band Low-Noise Amplifier
• Oscillator Applications

Procurement Notes

Verify the manufacturer origin, as the component was originally produced by SANYO Semiconductor Co.,Ltd. Confirm that the specific ordering suffix matches the required packaging format. Ensure the datasheet version aligns with the intended design specifications before procurement.

Selection Notes

Select this component for designs requiring high-frequency operation up to the X band with low noise figure characteristics. Consider the 3.5 V collector-to-emitter voltage limit when designing biasing circuits. Verify thermal management requirements against the 50 mW power dissipation rating.

Part Context

This part belongs to the family of RF bipolar transistors optimized for high-frequency amplification. It utilizes epitaxial planar silicon technology to achieve high gain and low noise figures essential for communication systems operating in the UHF and X band spectrum ranges.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Cross-reference electrical parameters such as fT, VCEO, and package dimensions to ensure compatibility.