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The EC4H09C is an NPN epitaxial planar silicon transistor designed for UHF to X band low-noise amplifier and oscillator applications. It features a high cut-off frequency of 26 GHz typical at VCE=3V and provides a forward transfer gain of 16.5 dB typical at f=2GHz. The device operates with low voltage requirements, supporting a collector-to-emitter voltage of 3.5 V and a maximum collector current of 40 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 70 to 150 and a noise figure as low as 1.3 dB under specific bias conditions.
Verify the manufacturer origin, as the component was originally produced by SANYO Semiconductor Co., Ltd. before its semiconductor business acquisition. Confirm RoHS compliance status and halogen-free certification against current supply chain documentation. Ensure the package marking matches the specified 'M' code for accurate identification during assembly.
Select this component for designs requiring high-frequency operation up to the X band with minimal noise contribution. Evaluate the 120 mW power dissipation limit and 150 °C junction temperature rating against thermal management constraints. Consider the ECSP1008-4 package dimensions for PCB layout compatibility and static sensitivity handling requirements.
This transistor belongs to the series of RF bipolar devices optimized for high-frequency amplification. Originally manufactured by SANYO Semiconductor, it serves as a specialized component for wireless communication systems operating in the UHF and X bands where low noise and high gain are critical design parameters.
Check for direct equivalents within the EC4HxxC series or updated part numbers following corporate acquisitions. Verify pinout compatibility and electrical parameter overlap before substitution.