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Product Detailed Parameters
- Description：MOSFET P-CH 20V 9.5A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8320-TL-H is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 9.5 A. The device utilizes an ECH surface-mount package with eight pins, measuring 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical characteristics include a maximum drain-source resistance of 39 mΩ, a maximum gate threshold voltage of 1.3 V, and a typical gate charge of 25 nC at 4.5 V. It operates up to a maximum junction temperature of +150 °C with a power dissipation of 1.6 W.
Feature Summary
- Single P-channel configuration for high-current switching applications
- Low on-resistance design for improved efficiency
- Enhanced mode operation with low gate threshold voltage
- Robust thermal performance supporting high-temperature environments
Applications
- Power management circuits
- Load switching applications
- DC-DC converter input/output stages
Procurement Notes
Verify the specific suffix TL-H against official datasheets to confirm tape-and-reel packaging and lead-free status. Ensure compatibility with RoHS directives if required by your manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm authenticity and traceability before procurement.
Selection Notes
Select this component when a single P-channel switch with 20 V rating and approximately 9.5 A current capability is required. The ECH package offers a compact footprint suitable for space-constrained designs. Consider the 39 mΩ on-resistance for thermal management needs and ensure the gate drive voltage aligns with the 1.3 V threshold specification for optimal performance.
Part Context
This device belongs to onsemi's ECH series of surface-mount MOSFETs. These components are designed for general-purpose power switching tasks. The ECH package provides a standardized form factor for automated assembly. This specific model represents a P-channel variant optimized for low-voltage, medium-current applications within the broader portfolio of silicon-based power transistors.
Replacement Considerations
Direct substitutes must match the 20 V rating, 9.5 A current capacity, and ECH 8-pin package. Verify that alternative parts maintain similar on-resistance and gate threshold specifications to ensure circuit compatibility without redesign.
